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Краткое описание:
N-CH MOSFET 100V 9.2A 270mR TO-220AB
Дополнительная информация
N-Channel MOSFET transistor for through-hole mounting in a TO-220AB package. Features a 100V drain-source breakdown voltage and a continuous drain current of 9.2A. Offers a maximum drain-source on-resistance of 270mR at a nominal gate-source voltage of 10V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 60W. Includes fast switching characteristics with turn-on delay time of 8.8ns and fall time of 20ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Nominal Vgs | 10V |
| Package/Case | TO-220AB |
| Current Rating | 9.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Input Capacitance | 360pF |
| Power Dissipation | 60W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
| Drain to Source Breakdown Voltage | 100V |
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