IRF530NSPBF
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Краткое описание:
N-Channel MOSFET, 100V, 17A, 90mΩ, D2PAK
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 17A Continuous Drain Current (ID). Features 0.09 ohm maximum drain-source on-resistance and 3.8W power dissipation. This silicon metal-oxide semiconductor FET is housed in a D2PAK package for surface mounting. Includes 920pF input capacitance and 4V gate threshold voltage. Operates from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 17A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Input Capacitance | 920pF |
| Power Dissipation | 3.8W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.2ns |
| Dual Supply Voltage | 100V |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.8W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 90MR |
| Drain to Source Breakdown Voltage | 100V |
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