IRF540SPBF

IRF540SPBF - Vishay(Siliconix)
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Краткое описание: N-Channel MOSFET, 100V, 28A, 77mR Rds On, TO-263
Производитель Vishay(Siliconix)
Категория MOSFET

Дополнительная информация

N-Channel Power MOSFET, surface mount, TO-263 package. Features 100V drain-source voltage, 28A continuous drain current, and 77mΩ drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. Offers a maximum power dissipation of 150W and a maximum operating temperature of 175°C. Includes fast switching times with a turn-on delay of 11ns and a fall time of 43ns. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.67mm
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 43ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 77mR
Nominal Vgs 4V
Package/Case TO-263
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 1.7nF
Power Dissipation 3.7W
Threshold Voltage 4V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 53ns
Reach SVHC Compliant Unknown
Max Power Dissipation 150W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 77mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 28A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 77mR

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