IRF5810TRPBF
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Краткое описание:
P-Channel MOSFET, 20V, 2.9A, 90mR, TSOP, Surface Mount
Дополнительная информация
P-channel MOSFET transistor in TSOP package, featuring a 20V Drain-Source Breakdown Voltage and 2.9A Continuous Drain Current. Offers a maximum Drain-Source On Resistance of 90mR and a Gate-Source Voltage rating of 12V. This surface mount device operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 960mW. Includes a 650pF input capacitance and fast switching times with a 8.2ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.75mm |
| Height | 1.3mm |
| Length | 3mm |
| Series | HEXFET® |
| Polarity | P-CHANNEL |
| Fall Time | 53ns |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Nominal Vgs | -1.2V |
| Termination | SMD/SMT |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 650pF |
| Power Dissipation | 960mW |
| Threshold Voltage | -1.2V |
| Number of Elements | 2 |
| Turn-On Delay Time | 8.2ns |
| Dual Supply Voltage | -20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 960mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90MR |
| Drain to Source Breakdown Voltage | -20V |
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