IRF5851TRPBF
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Краткое описание:
N/P-Channel FET, 20V, 2.2A, 90mR, TSOP, Surface Mount
Дополнительная информация
N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mount applications. Features a 20V drain-to-source breakdown voltage and a continuous drain current of 2.2A. Offers a low on-state resistance of 90mΩ and a gate-to-source voltage of 12V. Packaged in a compact TSOP-6, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.5mm |
| Height | 0.9mm |
| Length | 3mm |
| Series | HEXFET® |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Nominal Vgs | 1.25V |
| Termination | SMD/SMT |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 960mW |
| Threshold Voltage | 1.25V |
| Dual Supply Voltage | 20V |
| On-State Resistance | 90mR |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 960mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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