IRF610

Снят с производства
IRF610 - Vishay(Siliconix)
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Краткое описание: 200V N-CH MOSFET 3.3A 1.5R TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 200V drain-source voltage and 3.3A continuous drain current. Features 1.5 Ohm maximum drain-source resistance and 140pF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 36W. Packaged in a TO-220-3 through-hole mount configuration. Includes 8.2ns turn-on delay and 8.9ns fall time.
RoHS Not Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 8.9ns
Lead Free Contains Lead
Packaging Rail/Tube
Rds On Max 1.5R
Nominal Vgs 4V
Package/Case TO-220-3
Current Rating 3.3A
RoHS Compliant No
DC Rated Voltage 200V
Package Quantity 50
Input Capacitance 140pF
Number of Channels 1
Turn-On Delay Time 8.2ns
Turn-Off Delay Time 14ns
Reach SVHC Compliant Unknown
Max Power Dissipation 36W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.5R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.3A
Drain to Source Voltage (Vdss) 200V

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