IRF6201TRPBF
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Краткое описание:
N-Channel MOSFET, 20V, 27A, 2.45mR, SO, Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 20V drain-source breakdown voltage and 27A continuous drain current. Offers a low 2.45mΩ drain-source on-resistance. Designed for surface mounting in an SOP-8 package, this silicon metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 29ns turn-on delay and 265ns fall time. This component is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 265ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.45mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.555nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 29ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 320ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.45mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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