IRF6218PBF
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Краткое описание:
P-Channel MOSFET, 150V, 27A, 150mR, TO-220AB
Дополнительная информация
P-Channel Power MOSFET, TO-220AB package, featuring 150V drain-source breakdown voltage and 27A continuous drain current. Offers a maximum on-resistance of 150mΩ at a nominal gate-source voltage of -5V. This silicon, metal-oxide semiconductor FET operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 250W. Includes a 30ns fall time and 35ns turn-off delay time, with 2.21nF input capacitance. Through-hole mount, lead-free, and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | HEXFET® |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 150mR |
| Nominal Vgs | -5V |
| Package/Case | TO-220AB |
| Current Rating | -27A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -150V |
| Package Quantity | 50 |
| Input Capacitance | 2.21nF |
| Power Dissipation | 250W |
| Number of Elements | 1 |
| Dual Supply Voltage | -150V |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 150MR |
| Drain to Source Breakdown Voltage | -150V |
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