IRF630
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Краткое описание:
N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220
Дополнительная информация
N-channel power MOSFET with 200V drain-source breakdown voltage and 9A continuous drain current. Features 0.35 Ohm maximum drain-source on-resistance and 75W power dissipation. Packaged in a TO-220 through-hole mount, this component offers a gate-to-source voltage of +/-20V and operates within a temperature range of -65°C to 150°C. RoHS compliant with a 170ns reverse recovery time and 10ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | MESH OVERLAY™ II |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Lead Pitch | 2.54mm |
| Rds On Max | 400mR |
| Nominal Vgs | 3V |
| Package/Case | TO-220 |
| Current Rating | 9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1000 |
| Input Capacitance | 700pF |
| Power Dissipation | 75W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 200V |
| On-State Resistance | 400mR |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 75W |
| Reverse Recovery Time | 170ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Drain to Source Breakdown Voltage | 200V |
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