IRF634
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Краткое описание:
N-Channel MOSFET, 250V, 8.1A, 450mR Rds On, TO-220
Дополнительная информация
N-Channel MOSFET, TO-220AB package, featuring 250V drain-source voltage and 8.1A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.45-ohm drain-source resistance. Key switching characteristics include a 9.6ns turn-on delay and 19ns fall time. Maximum power dissipation is rated at 74W, with an operating temperature range from -55°C to 150°C.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 450mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | No |
| Package Quantity | 50 |
| Input Capacitance | 770pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 74W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Voltage (Vdss) | 250V |
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