IRF6609TRPBF
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Краткое описание:
20V 31A N-CH MOSFET, 2.6mR Rds(on), Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 20V drain-source breakdown voltage and 31A continuous drain current. Offers low 2.6mΩ drain-source resistance at VGS=10V, 5A. Designed for surface mount applications with a 7-pin Direct-FET package, providing 89W power dissipation. Includes fast switching characteristics with turn-on delay of 24ns and fall time of 9.8ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 9.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2mR |
| Current Rating | 31A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Input Capacitance | 6.29nF |
| Power Dissipation | 89W |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Max Power Dissipation | 1.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 2.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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