IRF6612TRPBF
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Краткое описание:
30V 24A N-CH MOSFET, 3.3mR Rds On, Surface Mount
Дополнительная информация
N-channel Power MOSFET, 30V drain-source breakdown voltage, 24A continuous drain current, and 4.4mΩ drain-source resistance at 1.8V nominal gate-source voltage. Features low on-resistance (Rds On Max 3.3mΩ), fast switching speeds with turn-on delay of 15ns and fall time of 4.8ns. Operates within a temperature range of -40°C to 150°C, with a maximum power dissipation of 89W. Surface mountable in a 7-pin Direct-FET MX package, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 4.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| Nominal Vgs | 1.8V |
| Current Rating | 24A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 3.97nF |
| Power Dissipation | 89W |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 4.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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