IRF6621TR1
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Краткое описание:
N-Channel MOSFET, 30V, 12A, 9.1mΩ Rds On, SMT
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 12A continuous drain current. Offers low on-resistance of 9.1mΩ at a nominal gate-source voltage of 1.8V. This silicon Metal-oxide Semiconductor FET boasts a fast fall time of 4.1ns and turn-off delay of 16ns, with a maximum power dissipation of 2.2W. Designed for surface mounting with tape and reel packaging, operating across a temperature range of -40°C to 150°C.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 4.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.1mR |
| Nominal Vgs | 1.8V |
| Termination | SMD/SMT |
| Current Rating | 12A |
| RoHS Compliant | No |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 1.46nF |
| Power Dissipation | 2.2W |
| Threshold Voltage | 1.8V |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.2W |
| Reverse Recovery Time | 9.8ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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