IRF6623TR1
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Краткое описание:
N-Channel MOSFET, 20V, 16A, 5.7mR Rds On, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 20V Vds, 16A continuous drain current, and 5.7mΩ Rds On. Features 1.36nF input capacitance, 2.2V nominal Vgs, and 12ns turn-off delay. Surface mountable in a 3.95mm width package, operating from -40°C to 150°C with 1.4W max power dissipation. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 5.7mR |
| Nominal Vgs | 2.2V |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.36nF |
| Power Dissipation | 1.4W |
| Threshold Voltage | 2.2V |
| Number of Elements | 1 |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.4W |
| Reverse Recovery Time | 20ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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