IRF6623TR1PBF
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Краткое описание:
N-Channel MOSFET, 20V, 16A, 5.7mR Rds(on), Surface Mount
Дополнительная информация
N-channel power MOSFET with 20V drain-source breakdown voltage and 16A continuous drain current. Features 5.7mΩ maximum drain-source on-resistance at a nominal 2.2V gate-source voltage. Offers a 1.4W maximum power dissipation and operates within a temperature range of -40°C to 150°C. This surface-mount device includes a 1.36nF input capacitance and is supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 4.5ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.7mR |
| Nominal Vgs | 2.2V |
| Termination | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.36nF |
| Power Dissipation | 1.4W |
| Threshold Voltage | 1.4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.7ns |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 9.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5.7MR |
| Drain to Source Breakdown Voltage | 20V |
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