IRF6631TRPBF
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Краткое описание:
N-CH MOSFET 30V 13A 7.8mR Direct-FET SQ SMT
Дополнительная информация
N-Channel Power MOSFET, 30V Vds, 13A Continuous Drain Current. Features low 7.8mΩ Rds(on) at 10V Vgs, 1.8V threshold voltage, and 4.9ns fall time. Surface mountable in a 6-pin Direct-FET SQ package, supplied on tape and reel. Operates from -40°C to 150°C with 42W max power dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 4.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| Nominal Vgs | 1.8V |
| Current Rating | 13A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 4800 |
| Input Capacitance | 1.45nF |
| Power Dissipation | 42W |
| Threshold Voltage | 1.8V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 10.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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