IRF6635TR1PBF
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Краткое описание:
N-Channel MOSFET, 30V, 32A, 1.8mR RdsOn, Surface Mount
Дополнительная информация
N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 32A. Offers a low 1.8mΩ drain-source on-resistance at a nominal 1.8V gate-source voltage. This surface-mount device operates within a temperature range of -40°C to 150°C with a maximum power dissipation of 2.8W. Includes fast switching characteristics with an 8.3ns fall time and 21ns turn-on delay. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.8mR |
| Nominal Vgs | 1.8V |
| Termination | SMD/SMT |
| Current Rating | 32A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 5.97nF |
| Power Dissipation | 2.8W |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.8MR |
| Drain to Source Breakdown Voltage | 30V |
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