IRF6646TR1
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N-CH MOSFET, 80V, 12A, 9.5mR, DirectFET, SMD
Дополнительная информация
N-channel MOSFET featuring 80V drain-to-source breakdown voltage and 12A continuous drain current. This DirectFET™ component offers a low Rds(on) of 9.5mΩ at a nominal Vgs of 4.9V. Operating across a temperature range of -40°C to 150°C, it boasts fast switching characteristics with turn-on delay of 17ns and fall time of 12ns. Surface mountable with SMD/SMT termination, it has a maximum power dissipation of 2.8W.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 9.5mR |
| Nominal Vgs | 4.9V |
| Termination | SMD/SMT |
| Current Rating | 12A |
| RoHS Compliant | No |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Input Capacitance | 2.06nF |
| Power Dissipation | 2.8W |
| Turn-On Delay Time | 17ns |
| Dual Supply Voltage | 80V |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.8W |
| Reverse Recovery Time | 36ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain to Source Breakdown Voltage | 80V |
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