IRF6648TR1PBF
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Краткое описание:
N-Channel MOSFET, 60V, 86A, 7mR Rds On, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 60V Drain-Source Breakdown Voltage, 86A Continuous Drain Current, and 7mΩ Max Drain-Source On-Resistance. Features 13ns Fall Time, 28ns Turn-Off Delay, and 16ns Turn-On Delay. Operates with a 20V Gate-to-Source Voltage and offers 2.12nF Input Capacitance. This surface-mount device, with a 2.8W Max Power Dissipation, is RoHS compliant and packaged on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.05mm |
| Height | 0.6mm |
| Length | 5.45mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7mR |
| Current Rating | 86A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 2.12nF |
| Power Dissipation | 2.8W |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 86A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7MR |
| Drain to Source Breakdown Voltage | 60V |
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