IRF6662TR1PBF
Снят с производства
Увеличить
Краткое описание:
N-CH MOSFET 100V 8.3A 17.5mR SMD
Дополнительная информация
N-CHANNEL MOSFET, 100V Vds, 8.3A Continuous Drain Current. Features 22mOhm Rds On Max, 17.5mR Drain to Source Resistance, and 22nC Qg. Operates with a 20V Gate to Source Voltage, exhibiting 5.9ns Fall Time, 11ns Turn-On Delay, and 24ns Turn-Off Delay. Surface mount package with 1.36nF Input Capacitance and 2.8W Max Power Dissipation. RoHS compliant, operating from -40°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.05mm |
| Height | 0.6mm |
| Length | 5.45mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 5.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Nominal Vgs | 3.9V |
| Termination | SMD/SMT |
| Current Rating | 8.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 1.36nF |
| Power Dissipation | 2.8W |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 17.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 22MR |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
