IRF6668TR1PBF
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N-Channel MOSFET, 80V, 55A, 15mR, SMD
Дополнительная информация
N-channel power MOSFET featuring 80V drain-source breakdown voltage and a maximum continuous drain current of 55A. This silicon, metal-oxide semiconductor FET offers a low 15mΩ drain-source on-resistance at a nominal 4V gate-source voltage. Designed for surface mounting with a compact 6.35mm x 5.05mm x 0.536mm footprint, it operates within a temperature range of -40°C to 150°C. Key switching characteristics include a 19ns turn-on delay and a 7.1ns turn-off delay, with an input capacitance of 1.32nF. This component is RoHS compliant and packaged on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.05mm |
| Height | 0.536mm |
| Length | 6.35mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Current Rating | 55A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Input Capacitance | 1.32nF |
| Power Dissipation | 2.8W |
| Number of Elements | 1 |
| Turn-On Delay Time | 19ns |
| Dual Supply Voltage | 80V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.1ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 15mR |
| Drain to Source Breakdown Voltage | 80V |
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