IRF6709S2TRPBF
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Краткое описание:
N-Channel MOSFET, 25V, 12A, 3.8mR Rds On, Surface Mount
Дополнительная информация
N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 12A continuous drain current. Offers low on-resistance of 7.8mΩ at 10Vgs, with a maximum of 13.5mΩ at 10Vgs. Designed for surface mounting with a compact 4.85mm x 3.95mm x 0.57mm footprint. Operates across a wide temperature range from -55°C to 175°C, with fast switching speeds including a 9.5ns fall time. This component is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 0.57mm |
| Length | 4.85mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 9.5ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 4800 |
| Input Capacitance | 1.81nF |
| Power Dissipation | 21W |
| Turn-On Delay Time | 8.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9.1ns |
| Max Power Dissipation | 2.2W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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