IRF6712STR1PBF
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Краткое описание:
N-Channel MOSFET, 25V, 17A, 4.9mR Rds(on), Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 25V Vds, 17A Continuous Drain Current, and 4.9mΩ Max Drain-Source On-Resistance. Features include 1.9V Threshold Voltage, 12ns Fall Time, 11ns Turn-On Delay, and 14ns Turn-Off Delay. This surface-mount component offers 1.57nF Input Capacitance and 2.2W Max Power Dissipation, operating from -40°C to 150°C. It is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 0.62mm |
| Length | 4.85mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.9mR |
| Nominal Vgs | 1.9V |
| Termination | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.57nF |
| Power Dissipation | 2.2W |
| Threshold Voltage | 1.9V |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Dual Supply Voltage | 25V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 8.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4.9MR |
| Drain to Source Breakdown Voltage | 25V |
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