IRF6725MTRPBF
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Краткое описание:
30V 170A N-CH MOSFET, 2.2mR Rds On, DirectFET
Дополнительная информация
N-Channel MOSFET featuring 30V drain-source breakdown voltage and 170A continuous drain current. Offers low 2.2mR Rds On resistance and 100W maximum power dissipation. Surface mount component with fast switching speeds, including 16ns turn-on delay and 13ns fall time. Operates across a -40°C to 150°C temperature range and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.2mR |
| Nominal Vgs | 1.8V |
| RoHS Compliant | Yes |
| Package Quantity | 4800 |
| Input Capacitance | 4.7nF |
| Power Dissipation | 100W |
| Threshold Voltage | 1.8V |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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