IRF7201PBF
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Краткое описание:
N-Channel MOSFET, 30V, 7.3A, 50mR, SOIC, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 30V Vds, 7.3A Continuous Drain Current (ID), and 0.03 Ohm (30mR) Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a fast 7ns turn-on delay and 19ns fall time, with a maximum power dissipation of 2.5W. Packaged in a lead-free SOIC (MS-012AA) surface-mount case, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| Current Rating | 7.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 95 |
| Input Capacitance | 550pF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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