IRF7353D1PBF
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Краткое описание:
N-Channel MOSFET, 30V, 6.5A, 32mR, SOIC, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 30V Vds, 6.5A continuous drain current, and 32mΩ Rds On. This single-element silicon Metal-oxide Semiconductor FET features a 1V threshold voltage and 650pF input capacitance. Designed for surface mounting in an SOIC package, it offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. RoHS and Lead Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | FETKY™ |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 32mR |
| Nominal Vgs | 1V |
| Package/Case | SOIC |
| Current Rating | 6.5A |
| RoHS Compliant | Yes |
| Forward Current | 2.7A |
| DC Rated Voltage | 30V |
| Package Quantity | 95 |
| Input Capacitance | 650pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.1ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 46mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Max Forward Surge Current (Ifsm) | 11A |
| Drain to Source Breakdown Voltage | 30V |
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