IRF740ASTRRPBF
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Краткое описание:
N-Channel MOSFET, 400V, 10A, 550mR Rds On, D2PAK
Дополнительная информация
N-Channel Power MOSFET, 400V Vdss, 10A Continuous Drain Current (ID), and 0.55 Ohm Max Drain-Source On-Resistance. Features include 10ns turn-on delay, 22ns fall time, and 24ns turn-off delay. This silicon Metal-Oxide-Semiconductor FET is housed in a D2PAK surface-mount package, offering a max power dissipation of 125W and operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 1.03nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 550MR |
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