IRF740SPBF
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Краткое описание:
N-Channel MOSFET, 400V, 10A, 550mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, featuring 400V drain-source breakdown voltage and 10A continuous drain current. Offers a low 0.55 ohm drain-source on-resistance and 1.4nF input capacitance. Designed for surface mounting with a maximum power dissipation of 3.1W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 24ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 550mR |
| Package/Case | D2PAK |
| Polarization | N |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 50 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 3.1W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 550mR |
| Drain to Source Breakdown Voltage | 400V |
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