IRF7452TRPBF
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Краткое описание:
N-Channel MOSFET, 100V, 4.5A, 60mR, SOIC, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 100V Vds, 4.5A continuous drain current, and 60mΩ maximum drain-source on-resistance. Features include a 5.5V nominal gate-source voltage, 930pF input capacitance, and 13ns fall time. This surface-mount device operates from -55°C to 150°C with a 2.5W maximum power dissipation. Packaged in SOIC for tape and reel, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | 5.5V |
| Package/Case | SOIC |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 930pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 5.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 60mR |
| Drain to Source Breakdown Voltage | 100V |
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