IRF7769L2TR1PBF
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Краткое описание:
N-Channel MOSFET, 100V, 20A, 3.5mR Rds(on), Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 100V Vds, 20A Continuous Drain Current, 3.5mΩ Max Rds(on). Features 44ns typical turn-on delay and 92ns typical turn-off delay, with a 41ns fall time. Operates from -55°C to 175°C, offering 125W max power dissipation. Surface mount package with 11.56nF input capacitance. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 7.1mm |
| Height | 0.496mm |
| Length | 9.15mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 41ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.5mR |
| Nominal Vgs | 2.7V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 11.56nF |
| Power Dissipation | 125W |
| Threshold Voltage | 2.7V |
| Number of Elements | 1 |
| Turn-On Delay Time | 44ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 92ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 3.5MR |
| Drain to Source Breakdown Voltage | 100V |
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