IRF7807D1TRPBF
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Краткое описание:
N-CHANNEL FET 30V 8.3A 25mR SOIC
Дополнительная информация
The IRF7807D1TRPBF is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a drain to source breakdown voltage of 30V. The device is packaged in a SOIC package and is lead free. It has a maximum drain to source resistance of 25mR and a maximum current rating of 8.3A.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | FETKY™ |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| Current Rating | 8.3A |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 8.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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