IRF7807VD1TRPBF
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Краткое описание:
N-Channel MOSFET, 30V, 8.3A, 25mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a continuous drain current of 8.3A and a drain-to-source breakdown voltage of 30V. Offers a low drain-source on-resistance of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in SOIC for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | FETKY™ |
| Polarity | N-CHANNEL |
| Fall Time | 2.2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOIC |
| Current Rating | 8.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Drain to Source Breakdown Voltage | 30V |
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