IRF7905PBF
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Краткое описание:
30V 8.9A N-Channel MOSFET, 2-Element, SOIC, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, featuring 30V drain-source breakdown voltage and 8.9A continuous drain current. This surface-mount device offers a low 21.8mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.8V. With a 2-element configuration and 600pF input capacitance, it exhibits a fall time of 3.4ns and turn-off delay of 8.1ns. The component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. It is RoHS compliant and packaged in an SOP-8 (SOIC) case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 3.4ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 21.8mR |
| Nominal Vgs | 1.8V |
| Package/Case | SOIC |
| Current Rating | 7.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 95 |
| Input Capacitance | 600pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1.8V |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.1ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21.8MR |
| Drain to Source Breakdown Voltage | 30V |
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