IRF7907PBF
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Краткое описание:
30V 11A N-Channel MOSFET, 2-Element, SOIC, 16.4mR Rds On
Дополнительная информация
N-Channel Power MOSFET, featuring 30V Drain-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). This surface-mount SOIC package component offers a low 16.4mR maximum Drain-Source On-Resistance (Rds On) and 2W maximum power dissipation. It includes two N-Channel elements, with a nominal Gate-Source Voltage (Vgs) of 1.8V and a threshold voltage of 1.8V. Designed for efficient switching, it exhibits a fall time of 5.3ns and a turn-off delay time of 13ns. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 5.3ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 16.4mR |
| Nominal Vgs | 1.8V |
| Package/Case | SOIC |
| Current Rating | 9.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 95 |
| Input Capacitance | 850pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1.8V |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 16.4MR |
| Drain to Source Breakdown Voltage | 30V |
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