IRF820PBF
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Краткое описание:
N-Channel MOSFET, 500V, 2.5A, 3R, TO-220AB
Дополнительная информация
N-Channel Power MOSFET, TO-220AB package, featuring 500V drain-source breakdown voltage and 2.5A continuous drain current. Offers a low 3-ohm drain-source on-resistance and 50W power dissipation. Designed for through-hole mounting with a nominal gate-source voltage of 4V and a threshold voltage of 4V. Includes fast switching characteristics with turn-on delay of 8ns and fall time of 16ns. RoHS compliant and suitable for operation between -55°C and 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Series | IRF/SIHF820 |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3R |
| Nominal Vgs | 4V |
| Package/Case | TO-220AB |
| Polarization | N |
| Current Rating | 2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 360pF |
| Power Dissipation | 50W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 3R |
| Drain to Source Breakdown Voltage | 500V |
