IRF840ASPBF
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Краткое описание:
N-Channel MOSFET, 500V, 8A, 850mR Rds On, D2PAK
Дополнительная информация
N-channel power MOSFET for surface mounting in a D2PAK package. Features a 500V drain-source voltage, 8A continuous drain current, and a maximum on-resistance of 850mΩ. Offers a gate-source voltage of 30V, with turn-on delay time of 11ns and fall time of 19ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 3.1W. This RoHS compliant component is designed for efficient power switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.018nF |
| Power Dissipation | 3.1W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
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