IRF840LCSPBF
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Краткое описание:
N-Channel MOSFET, 500V, 8A, 850mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, featuring 500V drain-source breakdown voltage and 8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.85ohm drain-source on-resistance and 125W maximum power dissipation. Designed for surface mounting, it operates across a wide temperature range from -55°C to 150°C with fast switching speeds, including a 12ns turn-on delay and 19ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | D2PAK |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
