IRF8707PBF
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Краткое описание:
N-Channel MOSFET, 30V, 11A, 11.9mΩ, SOIC, N-Channel
Дополнительная информация
N-Channel Power MOSFET, 30V Vdss, 11A continuous drain current, and 0.0119 ohm drain-source on-resistance. Features a 1.5mm height, 5mm length, and 4mm width in an SOIC package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching times with a 6.7ns turn-on delay and 4.4ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Fall Time | 4.4ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 1.8V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Input Capacitance | 760pF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.7ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.3ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11.9MR |
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