IRF8734PBF
Производится
Увеличить
Краткое описание:
N-CH MOSFET 30V 21A SOIC 5.1mR RdsOn
Дополнительная информация
N-channel MOSFET, surface mount, SOIC package. Features 30V drain-source breakdown voltage and 21A continuous drain current. Offers low 5.1mΩ drain-source resistance at a nominal 1.8V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 8ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.5mR |
| Nominal Vgs | 1.8V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 95 |
| Input Capacitance | 3.175nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
