IRF9530STRLPBF
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Краткое описание:
P-Channel MOSFET, 100V, 12A, 300mR, D2PAK, Surface Mount
Дополнительная информация
P-channel power MOSFET with 100V drain-source voltage and 12A continuous drain current. Features 300mΩ maximum drain-source on-resistance and 3.7W power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in a D2PAK surface-mount case, this RoHS compliant component offers fast switching times with turn-on delay of 12ns and fall time of 39ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 39ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 860pF |
| Power Dissipation | 3.7W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 300mR |
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