IRF9630SPBF
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Краткое описание:
P-Channel MOSFET, -200V, 6.5A, 800mR, TO-263, Surface Mount
Дополнительная информация
P-channel power MOSFET with a continuous drain current of 6.5A and a drain-to-source voltage of -200V. Features a low on-resistance of 800mΩ and a threshold voltage of -4V. This silicon, metal-oxide semiconductor FET offers a maximum power dissipation of 3W and operates within a temperature range of -55°C to 150°C. Packaged in a D2PAK surface-mount case, it includes fast switching characteristics with turn-on delay of 12ns and fall time of 24ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.02mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 24ns |
| Packaging | Rail/Tube |
| Rds On Max | 800mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 700pF |
| Power Dissipation | 3W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | -200V |
