IRF9640LPBF
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Краткое описание:
P-Channel MOSFET, 200V, 11A, 500mR, TO-262
Дополнительная информация
P-channel power MOSFET with 200V drain-source voltage and 11A continuous drain current. Features 0.5ohm drain-source resistance and 125W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Through-hole mounting in a TO-262-3 package. Includes 1.2nF input capacitance and 38ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Weight | 0.211644oz |
| Polarity | P-CHANNEL |
| Fall Time | 38ns |
| Packaging | Rail/Tube |
| Rds On Max | 500mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.2nF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 500mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 200V |
