IRF9Z14SPBF
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Краткое описание:
P-Channel MOSFET, -60V, 6.7A, 500mR, TO-263
Дополнительная информация
P-channel power MOSFET featuring a -60V drain-source breakdown voltage and 6.7A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 500mΩ drain-source on-resistance. Designed for surface mount or through-hole applications, it operates within a -55°C to 175°C temperature range and has a maximum power dissipation of 43W. Key electrical characteristics include a 20V gate-source voltage rating and 270pF input capacitance.
| RoHS | Compliant |
| Mount | Surface Mount, Through Hole |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 500mR |
| Nominal Vgs | -4V |
| Package/Case | TO-263-3 |
| Polarization | P |
| Current Rating | -6.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 50 |
| Input Capacitance | 270pF |
| Power Dissipation | 43W |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 10ns |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 500mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 500mR |
| Drain to Source Breakdown Voltage | -60V |
