IRF9Z24PBF
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Краткое описание:
P-Channel MOSFET, 60V, 11A, 280mR, TO-220AB
Дополнительная информация
P-channel power MOSFET with 60V drain-source voltage and 11A continuous drain current. Features a low 280mΩ drain-source on-resistance and a maximum power dissipation of 60W. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount with a 3-lead configuration. Includes fast switching times with turn-on delay of 13ns and fall time of 29ns. RoHS compliant for environmental considerations.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Weight | 0.211644oz |
| Polarity | P-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Nominal Vgs | -4V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 570pF |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 280mR |
