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P-Channel MOSFET, 60V, 11A, 280mR, D2PAK, Surface Mount
Дополнительная информация
P-channel MOSFET, 60V drain-source voltage, 11A continuous drain current, and 280mΩ maximum drain-source on-resistance. Features a D2PAK surface-mount package, 175°C maximum operating temperature, and 60W maximum power dissipation. Includes 13ns turn-on delay, 29ns fall time, and 15ns turn-off delay. This silicon metal-oxide semiconductor FET is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 570pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 280mR |
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