IRFB4212PBF
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Краткое описание:
N-Channel MOSFET, 100V, 18A, 72.5mR, TO-220AB
Дополнительная информация
N-channel MOSFET, 100V drain-source breakdown voltage, 18A continuous drain current, and 72.5mΩ maximum drain-source on-resistance. Features a TO-220AB through-hole package, 60W power dissipation, and operates from -55°C to 175°C. Includes 3.9ns fall time, 7.7ns turn-on delay, and 14ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.82mm |
| Height | 9.02mm |
| Length | 10.66mm |
| Polarity | N-CHANNEL |
| Fall Time | 3.9ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 72.5mR |
| Nominal Vgs | 5V |
| Termination | Through Hole |
| Package/Case | TO-220AB |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Input Capacitance | 550pF |
| Power Dissipation | 60W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.7ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 72.5mR |
| Drain to Source Breakdown Voltage | 100V |
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