IRFB4510PBF
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Краткое описание:
N-CH MOSFET 100V 62A TO-220AB HEXFET Power Transistor
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 62A continuous drain current. This single-element silicon transistor utilizes HEXFET process technology and is housed in a TO-220AB package with 3 through-hole pins and a tab. Key electrical characteristics include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 13.5 mOhm at 10V, and a typical input capacitance of 3180pF at 50V. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 140W.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Process Technology | HEXFET |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.02(Max) |
| Package Length (mm) | 10.67(Max) |
| Seated Plane Height (mm) | 20.57(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 140000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 58nC |
| Typical Gate Charge @ Vgs | 58@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 13.5@10VmOhm |
| Typical Input Capacitance @ Vds | 3180@50VpF |
| Maximum Continuous Drain Current | 62A |
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