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Краткое описание:
600V 6.2A N-Channel MOSFET TO-220AB 1.2R
Дополнительная информация
N-Channel Power MOSFET, TO-220AB package, featuring 600V drain-source breakdown voltage and 6.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.2 ohm drain-source on-resistance and 125W maximum power dissipation. Ideal for through-hole mounting, it operates from -55°C to 150°C with a 30V gate-to-source voltage rating. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 17ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Nominal Vgs | 4V |
| Termination | Through Hole |
| Package/Case | TO-220AB |
| Polarization | N |
| Current Rating | 6.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1000 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 125W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | 600V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 600V |
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