IRFBC40PBF

IRFBC40PBF - Vishay(Siliconix)
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Краткое описание: 600V 6.2A N-Channel MOSFET, 1.2R Rds On, TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET

Дополнительная информация

N-Channel Power MOSFET, 600V Drain-Source Voltage, 6.2A Continuous Drain Current, and 1.2Ω Max Drain-Source On-Resistance. Features 125W Max Power Dissipation, 1.3nF Input Capacitance, and 20V Gate-Source Voltage. Operates from -55°C to 150°C, with typical turn-on delay of 13ns and turn-off delay of 55ns. Packaged in TO-220AB for through-hole mounting, this RoHS compliant component is ideal for power switching applications.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Weight 0.211644oz
Current 62A
Voltage 600V
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 1.2R
Nominal Vgs 4V
Package/Case TO-220AB
Polarization N
Current Rating 6.2A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 50
Input Capacitance 1.3nF
Power Dissipation 125W
Threshold Voltage 4V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 13ns
Turn-Off Delay Time 55ns
Reach SVHC Compliant Unknown
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.2R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.2A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 1.2R
Drain to Source Breakdown Voltage 600V

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