IRFBF30S
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Краткое описание:
N-CH MOSFET, 900V, 3.6A, 3.7R, D2PAK, Surface Mount
Дополнительная информация
N-channel power transistor in a D2PAK surface-mount package. Features a 900V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3.6A. Offers a low on-resistance (Rds On Max) of 3.7 Ohms. Includes fast switching characteristics with a 14ns turn-on delay and 30ns fall time. Maximum power dissipation is 125W, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 3.7R |
| Package/Case | D2PAK |
| RoHS Compliant | No |
| Package Quantity | 50 |
| Input Capacitance | 1.2nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 90ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.7R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 900V |
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